Temperature-Modulated Doping at Polymer Semiconductor Interfaces

Understanding doping in polymer semiconductors has important implications for the development of organic electronic devices. This study reports a detailed investigation poly(3-hexylthiophene) (P3HT)/Nafion bilayer interfaces commonly used biosensors. A combination UV–visible spectroscopy, dynamic secondary ion mass spectrometry (d-SIMS), mechanical thermal analysis, and electrical device characterization reveals that P3HT increases with annealing temperature, this increase is associated thermally activated interdiffusion Nafion. First-principles modeling d-SIMS depth profiling data demonstrates diffusivity coefficient strong function molar concentration, resulting discrete intermixed region at P3HT/Nafion interface grows increasing temperature. Correlating conductance measurements diffusion model provides temperature-modulated occurs bilayers. Point-of-care testing created market low-cost sensor technology, printed sensors well positioned to meet demand, article constitutes mechanism underlying such future platforms sensing technologies based on semiconductors.